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71.
A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fiRing-parameters, and verified by the 3-D numerical simulation. 相似文献
72.
A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation. 相似文献
73.
场引晶体管本质双极,包括电子和空穴表面和体积沟道和电流,一或多个外加横向控制电场.自1952年Shockley发明,55年来它被认为单极场引晶体管,因电子电流理论用多余内部和边界条件,不可避免忽略空穴电流.多余条件,诸如电中性和常空穴电化电势,导致仅用电子电流算内部和终端电学特性的错误解.当忽略的空穴电流与电子电流可比,可在亚阈值区和强反型区,错误解有巨大误差.本文描述普适理论,含有电子和空穴沟道和电流.用z轴宽度方向均匀的直角平行六面体(x,Y,z)晶体管,薄或厚、纯或杂基体,一或二块MOS栅极,描述两维效应及电势、电子空穴电化电势的正确内部和边界条件.没用多余条件,导出四种常用MOS晶体管,直流电流电压特性完备解析方程:半无限厚不纯基上一块栅极(传统的Bulk MOSFET),与体硅以氧化物绝缘的不纯硅薄层上一块栅极(SOI),在沉积到绝缘玻璃的不纯硅薄层上一块栅极(SOI TFT),和薄纯基上两块栅极(FinFETs). 相似文献
74.
75.
An approach to get uniaxial tensile stress from the channel by using strained silicon to enhance drain current and mobility was developed. A 65 nm metal-oxide-semiconductor field-effect transistor (MOSFET) was bent by applying external mechanical stress. The drain current and transconductance of the transistor were found to increase 15% and 20%, respectively. In this paper, the behaviors of the substrate current and the impact ionization rate are also investigated. It was found that the substrate current and gate voltage corresponding to the maximum impact ionization current have significantly increased by increasing external mechanical stress. According to the relationship to the strain-induced mobility enhancement, the increase in impact ionization efficiency resulted from the decrease in threshold energy for impact ionization which was due to the narrowing of the bandgap. 相似文献
76.
《Microelectronics Journal》2015,46(5):362-369
A new solution for an ultra-low-voltage, low-power, bulk-driven fully differential-difference amplifier (FDDA) is presented in the paper. Simulated performance of the overall FDDA for a 50 nm CMOS process and supply voltage of 0.4 V, shows dissipation power of 31.8 μW, the open loop voltage gain of 58.6 dB and the gain-bandwidth product (GBW) of 2.3 MHz for a 20 pF load capacitance. Despite the very low supply voltage, the FDDA exhibits rail-to-rail input/output swing. The circuit performance has also been tested in two applications; the differential voltage follower and the second-order band-pass filter, showing satisfactory accuracy and dynamic range. 相似文献
77.
78.
重离子会在槽栅功率MOSFET器件中引起电压电流特性漂移,即单粒子微剂量效应。为表征该效应,本文提出了一个电荷沉积模型。该模型可用来计算重离子轰击氧化层后引起的电荷沉积及电荷输运过程。应用本模型计算了单个Xe离子在二氧化硅/硅界面沉积的空穴正电荷。通过将该计算结果导入Sentaurus仿真软件中,模拟了单个Xe离子轰击槽栅MOSFET后引起的电压电流曲线漂移。模拟结果与相关实验结果一致。最后,应用本模型研究了不同参数对槽栅功率MOSFET单粒子微剂量效应的影响。 相似文献
79.
In order to examine the peak carrier mobility reduction in ultrathin high-κ based FETs, interface state density in HfSiON gated FETs (of EOT < 2 nm) was studied experimentally using two high resolution techniques. Both techniques independently established similar interface charge density values for the devices studied. By further studying the Coulomb limited mobility in the high-κ based FETs using a quantum mechanical approach, it is concluded that interface charge alone is insufficient to explain the peak mobility degradation observed, indicating that remote charge scattering, RCS, may be a significant mobility degradation factor in ultra thin HfSiON based FETs. 相似文献
80.
In this paper we critically review and compare experimental methods, based on the Lundstrom model, to extract the channel backscattering ratio in nano MOSFETs. Basically two experimental methods are currently used, the most common of them is based on the measurement of the saturation drain current at different temperatures. We show that this method is affected by very poor assumptions and that the extracted backscattering ratio strongly underestimates its actual value posing particular attention to the backscattering actually extracted in nano devices. The second method is based on the direct measurement of the inversion charge by CV characteristics and gets closer to the physics of the backscattering model. We show, through measurements in high mobility p-germanium devices, how the temperature-based method gives the same result of the CV-based method once that its approximations are removed. Moreover we show that the CV-based method uses a number of approximations which are partially inconsistent with the model. In particular we show, with the aid of 2D quantum corrected device simulations, that the value of the barrier lowering obtained through the CV-based method is totally inconsistent with the barrier lowering used to correct the inversion charge and that the extracted saturation inversion charge is underestimated. 相似文献